Study on the growth mechanism of pentacene thin films by the analysis of island density and island size distribution

M. Tejima, K. Kita, K. Kyuno, A. Toriumi

研究成果: Article査読

33 被引用数 (Scopus)

抄録

The growth mechanism of pentacene thin films on a thermally grown SiO 2 on Si(100) substrate is examined in detail for a wide substrate temperature range (223-342 K) by analyzing the saturated island density and island size distribution. It is found that the log plot of the saturated island density as a function of inverse substrate temperature can be well represented by two straight lines and that these two regions have different critical cluster sizes for nucleation which is independently confirmed by island size distribution analysis. It is concluded that the nucleation behavior of pentacene thin films can be explained by the diffusion-mediated growth model well known in inorganic thin-film growth.

本文言語English
ページ(範囲)3746-3748
ページ数3
ジャーナルApplied Physics Letters
85
17
DOI
出版ステータスPublished - 2004 10月 25
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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