Sub-1 V supply voltage GaAs LSI technology based on 0.25 μm E/D-HJFETs (IS³Ts)

Hikaru Hida, Masatoshi Tokushima, Tadashi Maeda, Masaoki Ishikawa, Muneo Fukaishi, Keiichi Numata, Yasuo Ohno

研究成果: Chapter