Submicrometer lithography by near-field optical microscopy

Saulius Juodkazis, Y. Arisawa, S. Matsuo, H. Misawa, R. Tomasiunas, J. Vaitkus

研究成果: Article査読

1 被引用数 (Scopus)


Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1: 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).

ジャーナルProceedings of SPIE-The International Society for Optical Engineering
出版ステータスPublished - 2001

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


「Submicrometer lithography by near-field optical microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。