TY - JOUR
T1 - Submicrometer lithography by near-field optical microscopy
AU - Juodkazis, Saulius
AU - Arisawa, Y.
AU - Matsuo, S.
AU - Misawa, H.
AU - Tomasiunas, R.
AU - Vaitkus, J.
PY - 2001
Y1 - 2001
N2 - Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1: 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).
AB - Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near-field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000(EG), which is photo-sensitive for wavelength λ < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P < 1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (< 1 m length) and delivered to the surface of the resist for illumination.The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1: 1) NSOM-based lithography there should be found resists allowing to produce thin films (< 100 nm) with low surface roughness (< 10 nm).
KW - Al-coated silica tapered tips
KW - Lithography
KW - Near-field optical microscopy
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U2 - 10.1117/12.417618
DO - 10.1117/12.417618
M3 - Article
AN - SCOPUS:0034938103
VL - 4318
SP - 42
EP - 47
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
ER -