Subnanosecond-laser-induced periodic surface structures on prescratched silicon substrate

Motoharu Hongo, Shigeki Matsuo

研究成果: Article

2 引用 (Scopus)

抄録

Laser-induced periodic surface structures (LIPSS) were fabricated on a prescratched silicon surface by irradiation with subnanosecond laser pulses. Low-spatial-frequency LIPSS (LSFL) were observed in the central and peripheral regions; both had a period Λ close to the laser wavelength λ, and the wavevector orientation was parallel to the electric field of the laser beam. The LSFL in the peripheral region seemed to be growing, that is, expanding in length with increasing number of pulses, into the outer regions. In addition, high-spatial-frequency LIPSS, λ ≲ λ =2, were found along the scratches, and their wavevector orientation was parallel to the scratches.

元の言語English
記事番号062703
ジャーナルApplied Physics Express
9
発行部数6
DOI
出版物ステータスPublished - 2016 6 1

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Surface structure
Silicon
Lasers
silicon
Substrates
lasers
Laser beams
Laser pulses
pulses
Electric fields
Irradiation
Wavelength
laser beams
irradiation
electric fields
wavelengths

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

@article{af3f576aba264d9dbff16c9849a7db04,
title = "Subnanosecond-laser-induced periodic surface structures on prescratched silicon substrate",
abstract = "Laser-induced periodic surface structures (LIPSS) were fabricated on a prescratched silicon surface by irradiation with subnanosecond laser pulses. Low-spatial-frequency LIPSS (LSFL) were observed in the central and peripheral regions; both had a period Λ close to the laser wavelength λ, and the wavevector orientation was parallel to the electric field of the laser beam. The LSFL in the peripheral region seemed to be growing, that is, expanding in length with increasing number of pulses, into the outer regions. In addition, high-spatial-frequency LIPSS, λ ≲ λ =2, were found along the scratches, and their wavevector orientation was parallel to the scratches.",
author = "Motoharu Hongo and Shigeki Matsuo",
year = "2016",
month = "6",
day = "1",
doi = "10.7567/APEX.9.062703",
language = "English",
volume = "9",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "6",

}

TY - JOUR

T1 - Subnanosecond-laser-induced periodic surface structures on prescratched silicon substrate

AU - Hongo, Motoharu

AU - Matsuo, Shigeki

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Laser-induced periodic surface structures (LIPSS) were fabricated on a prescratched silicon surface by irradiation with subnanosecond laser pulses. Low-spatial-frequency LIPSS (LSFL) were observed in the central and peripheral regions; both had a period Λ close to the laser wavelength λ, and the wavevector orientation was parallel to the electric field of the laser beam. The LSFL in the peripheral region seemed to be growing, that is, expanding in length with increasing number of pulses, into the outer regions. In addition, high-spatial-frequency LIPSS, λ ≲ λ =2, were found along the scratches, and their wavevector orientation was parallel to the scratches.

AB - Laser-induced periodic surface structures (LIPSS) were fabricated on a prescratched silicon surface by irradiation with subnanosecond laser pulses. Low-spatial-frequency LIPSS (LSFL) were observed in the central and peripheral regions; both had a period Λ close to the laser wavelength λ, and the wavevector orientation was parallel to the electric field of the laser beam. The LSFL in the peripheral region seemed to be growing, that is, expanding in length with increasing number of pulses, into the outer regions. In addition, high-spatial-frequency LIPSS, λ ≲ λ =2, were found along the scratches, and their wavevector orientation was parallel to the scratches.

UR - http://www.scopus.com/inward/record.url?scp=84973457886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84973457886&partnerID=8YFLogxK

U2 - 10.7567/APEX.9.062703

DO - 10.7567/APEX.9.062703

M3 - Article

AN - SCOPUS:84973457886

VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 6

M1 - 062703

ER -