抄録
Growth of GaN-based light-emitting-diode (LED) structures with GaInN/GaN multi-quantum wells (MQWs) has been explored by metalorganic chemical vapor deposition. GaInN/GaN MQW structures were found to decompose during the subsequent growth of a Mg-doped GaN top layer. This was prevented by adding 5% hydrogen in the growth of the GaN quantum barrier (QB) layer. Photoluminescence (PL) analysis of the grown GaInN/GaN MQW shows a PL peak shift caused by a reduction of the GaInN quantum well (QW) thickness. To prevent the variation of the GaInN QW thickness, a GaN cap layer with varying thickness has been inserted between the GaInN QW and the GaN QB layer. Both strong PL intensity and suppression of the peak shift were obtained for a 1-nm-thick GaN cap layer.
| 元の言語 | English |
|---|---|
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 40 |
| 発行部数 | 11 A |
| 出版物ステータス | Published - 2001 11 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure. / Ishikawa, Hiroyasu; Nakada, Naoyuki; Mori, Masayoshi; Zhao, Guan Yuan; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.
：: Japanese Journal of Applied Physics, Part 2: Letters, 巻 40, 番号 11 A, 01.11.2001.研究成果: Article
}
TY - JOUR
T1 - Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure
AU - Ishikawa, Hiroyasu
AU - Nakada, Naoyuki
AU - Mori, Masayoshi
AU - Zhao, Guan Yuan
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 2001/11/1
Y1 - 2001/11/1
N2 - Growth of GaN-based light-emitting-diode (LED) structures with GaInN/GaN multi-quantum wells (MQWs) has been explored by metalorganic chemical vapor deposition. GaInN/GaN MQW structures were found to decompose during the subsequent growth of a Mg-doped GaN top layer. This was prevented by adding 5% hydrogen in the growth of the GaN quantum barrier (QB) layer. Photoluminescence (PL) analysis of the grown GaInN/GaN MQW shows a PL peak shift caused by a reduction of the GaInN quantum well (QW) thickness. To prevent the variation of the GaInN QW thickness, a GaN cap layer with varying thickness has been inserted between the GaInN QW and the GaN QB layer. Both strong PL intensity and suppression of the peak shift were obtained for a 1-nm-thick GaN cap layer.
AB - Growth of GaN-based light-emitting-diode (LED) structures with GaInN/GaN multi-quantum wells (MQWs) has been explored by metalorganic chemical vapor deposition. GaInN/GaN MQW structures were found to decompose during the subsequent growth of a Mg-doped GaN top layer. This was prevented by adding 5% hydrogen in the growth of the GaN quantum barrier (QB) layer. Photoluminescence (PL) analysis of the grown GaInN/GaN MQW shows a PL peak shift caused by a reduction of the GaInN quantum well (QW) thickness. To prevent the variation of the GaInN QW thickness, a GaN cap layer with varying thickness has been inserted between the GaInN QW and the GaN QB layer. Both strong PL intensity and suppression of the peak shift were obtained for a 1-nm-thick GaN cap layer.
KW - Decomposition
KW - GaInN
KW - GaN
KW - Light-emitting diode
KW - Multi-quantum-well
UR - http://www.scopus.com/inward/record.url?scp=0035517507&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035517507&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035517507
VL - 40
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 A
ER -