Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, Y. Sano

研究成果: Article査読

175 被引用数 (Scopus)

抄録

The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I Dmax) and extrinsic transductance(gmmax) was observed on comparing the passivated (SiO2, Si3N4 and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BVgd) on SiO2 passivated HEMT were due to the formation of deep traps.

本文言語English
ページ(範囲)613-615
ページ数3
ジャーナルApplied Physics Letters
84
4
DOI
出版ステータスPublished - 2004 1 26
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, and silicon oxynitride」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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