The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I Dmax) and extrinsic transductance(gmmax) was observed on comparing the passivated (SiO2, Si3N4 and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BVgd) on SiO2 passivated HEMT were due to the formation of deep traps.
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