抜粋
Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta2O5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta2O5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta2O5 films at low temperature. Electric characteristics of these Ta2O5 films were almost the same as those Ta2O5 films prepared by sputtering and chemical vapor deposition.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 493-498 |
| ページ数 | 6 |
| ジャーナル | Journal of Non-Crystalline Solids |
| 巻 | 147-148 |
| 発行部数 | C |
| DOI | |
| 出版物ステータス | Published - 1992 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
フィンガープリント Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Ohishi, T., Maekawa, S., & Katoh, A. (1992). Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation. Journal of Non-Crystalline Solids, 147-148(C), 493-498. https://doi.org/10.1016/S0022-3093(05)80665-9