抄録
Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta2O5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta2O5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta2O5 films at low temperature. Electric characteristics of these Ta2O5 films were almost the same as those Ta2O5 films prepared by sputtering and chemical vapor deposition.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 493-498 |
| ページ数 | 6 |
| ジャーナル | Journal of Non-Crystalline Solids |
| 巻 | 147-148 |
| 発行部数 | C |
| DOI | |
| 出版物ステータス | Published - 1992 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
これを引用
Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation. / Ohishi, Tomoji; Maekawa, S.; Katoh, A.
：: Journal of Non-Crystalline Solids, 巻 147-148, 番号 C, 1992, p. 493-498.研究成果: Article
}
TY - JOUR
T1 - Synthesis and properties of tantalum oxide films prepared by the sol-gel method using photo-irradiation
AU - Ohishi, Tomoji
AU - Maekawa, S.
AU - Katoh, A.
PY - 1992
Y1 - 1992
N2 - Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta2O5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta2O5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta2O5 films at low temperature. Electric characteristics of these Ta2O5 films were almost the same as those Ta2O5 films prepared by sputtering and chemical vapor deposition.
AB - Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta2O5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta2O5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta2O5 films at low temperature. Electric characteristics of these Ta2O5 films were almost the same as those Ta2O5 films prepared by sputtering and chemical vapor deposition.
UR - http://www.scopus.com/inward/record.url?scp=0026931675&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026931675&partnerID=8YFLogxK
U2 - 10.1016/S0022-3093(05)80665-9
DO - 10.1016/S0022-3093(05)80665-9
M3 - Article
AN - SCOPUS:0026931675
VL - 147-148
SP - 493
EP - 498
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - C
ER -