Recently, interest in the sol-gel method has been increasing, especially in preparing dielectric thin films with high dielectric constant. Tantalum oxide (Ta2O5) films are good candidates for insulators in LSI devices, electroluminescent devices and film capacitors because of their large dielectric constant. In the present paper, the preparation method and properties of Ta2O5 films, fabricated by a new process consisting of sol-gel process together with the photo-irradiation process, is reported. In this method, it became possible to fabricate Ta2O5 films at low temperature. Electric characteristics of these Ta2O5 films were almost the same as those Ta2O5 films prepared by sputtering and chemical vapor deposition.
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