Synthesis of doped carbon nanotubes by CVD using NiB catalysts

Kosuke Tomita, Naoaki Kawakami, Akihiko Aozasa, Kou Aida, Kazuyoshi Ueno

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We have proposed a new method for in-situ doping of multiwall carbon nanotubes (MWCNTs) by catalytic CVD using nickel boron (NiB) as the catalyst. Raman spectrum measurements were carried out to determine the effects of doping using NiB catalysts with different B-concentrations at different CVD temperatures. The characteristic shifts in the Raman spectra which indicate carrier doping were demonstrated for the NiB catalyst with 18 atomic % B at the CVD temperature of 900°C. The CNT crystallinity was improved by a new catalyst structure with a B-capping layer over the NiB catalyst.

本文言語English
ホスト出版物のタイトル2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ198-199
ページ数2
ISBN(電子版)9781509003860
DOI
出版ステータスPublished - 2016 7月 8
イベント2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
継続期間: 2016 5月 232016 5月 26

Other

Other2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
国/地域United States
CitySan Jose
Period16/5/2316/5/26

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 金属および合金
  • 表面、皮膜および薄膜

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