Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia

Hajime Kiyono, Masatoshi Chindo, Daisuke Maruoka, Makoto Nanko

研究成果: Article査読

抄録

GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

本文言語English
ページ(範囲)50-54
ページ数5
ジャーナルNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
125
1
DOI
出版ステータスPublished - 2017 1 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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