Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia

Hajime Kiyono, Masatoshi Chindo, Daisuke Maruoka, Makoto Nanko

研究成果: Article

抄録

GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

元の言語English
ページ(範囲)50-54
ページ数5
ジャーナルNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
125
発行部数1
DOI
出版物ステータスPublished - 2017 1 1

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gallium oxides
Gallium nitride
Aluminum Oxide
gallium nitrides
Gallium
Nickel
Ammonia
Partial pressure
Powders
Nanowires
partial pressure
ammonia
nanowires
Alumina
low pressure
aluminum oxides
nickel
wire
Wire
Oxides

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

これを引用

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title = "Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia",
abstract = "GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.",
keywords = "Alumina, Ammonia, Catalyst, Gallium nitride, Gallium oxide, Nano-wires, Nickel",
author = "Hajime Kiyono and Masatoshi Chindo and Daisuke Maruoka and Makoto Nanko",
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T1 - Synthesis of gallium nitride nano-wires on nickel-alumina composites from gallium oxide powder under a low partial pressure of ammonia

AU - Kiyono, Hajime

AU - Chindo, Masatoshi

AU - Maruoka, Daisuke

AU - Nanko, Makoto

PY - 2017/1/1

Y1 - 2017/1/1

N2 - GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

AB - GaN nanowires were synthesized on silicon, nickel nitrate [Ni(NO3)2]-dispersed silicon, and a nickel-dispersed alumina (Ni/Al2O3) composite under an argon atmosphere containing a low partial pressure of ammonia (PNH3 = 10 kPa). GaN nanowires were formed on the Ni(NO3)2-dispersed silicon and Ni/Al2O3 composite substrates. Two kinds of nanowires with different morphologies were observed. Initially, the formation of rough-surfaced nanowires occurred, which was followed by the formation of smoothsurfaced nanowires. In the case of the Ni/Al2O3 composite, GaN nanowires with rough surfaces were formed after 15 min at 1000°C, and the number of nanowires increased with the holding time. TEM observations showed that the nanowires grew in the [100] direction, which supported the proposed vapor-liquid-solid growth mechanism.

KW - Alumina

KW - Ammonia

KW - Catalyst

KW - Gallium nitride

KW - Gallium oxide

KW - Nano-wires

KW - Nickel

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