Synthesis of nitrogen-doped multilayer graphene film by solid-phase deposition using Co-N catalyst

Yuki Fujishima, Kazuyoshi Ueno

研究成果: Conference contribution

抜粋

A new process using a Co-N catalyst has been developed to perform doping simultaneously with film formation in solid phase deposition method (SPD) which does not require transfer of multilayer graphene (MLG). Nitrogen doping into MLG was confirmed by XPS and UPS and succeeded in reducing sheet resistance by about 36%.

元の言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ354-356
ページ数3
ISBN(電子版)9781538665084
DOI
出版物ステータスPublished - 2019 3 1
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

氏名2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Singapore
Singapore
期間19/3/1219/3/15

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

これを引用

Fujishima, Y., & Ueno, K. (2019). Synthesis of nitrogen-doped multilayer graphene film by solid-phase deposition using Co-N catalyst. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 354-356). [8731097] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731097