Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

doi:10.1063/1.1571655

Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article › 査読

78 被引用数 (Scopus)

抄録

The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

本文言語	English
ページ（範囲）	3110-3112
ページ数	3
ジャーナル	Applied Physics Letters
巻	82
号	18
DOI	https://doi.org/10.1063/1.1571655
出版ステータス	Published - 2003 5月 5
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1571655

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AU - Ishikawa, H.

AU - Jimbo, T.

PY - 2003/5/5

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AB - The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

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Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

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