Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article査読

68 被引用数 (Scopus)

抄録

The temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 °C was investigated. It was found that the leakage current decreases with the temperature up to 80 °C, and above 80 °C, the leakege current increases with the temperature. Results showed that the negative temperature dependence of leakage current with the activation energy +0.61 eV was due to the impact ionization.

本文言語English
ページ(範囲)3110-3112
ページ数3
ジャーナルApplied Physics Letters
82
18
DOI
出版ステータスPublished - 2003 5 5
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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