The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.
|ジャーナル||Institute of Physics Conference Series|
|出版ステータス||Published - 2005|
|イベント||31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of|
継続期間: 2004 9月 12 → 2004 12月 16
ASJC Scopus subject areas