TY - JOUR
T1 - Terahertz-wave generation using GaSe crystals with different carrier densities
AU - Tanabe, T.
AU - Suto, K.
AU - Nishizawa, J.
AU - Sasaki, T.
AU - Yasuda, H.
AU - Oyama, Y.
PY - 2005
Y1 - 2005
N2 - The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.
AB - The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.
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M3 - Conference article
AN - SCOPUS:33644545056
VL - 184
SP - 85
EP - 88
JO - Institute of Physics Conference Series
JF - Institute of Physics Conference Series
SN - 0951-3248
T2 - 31st International Symposium of Compound Semiconductors 2004
Y2 - 12 September 2004 through 16 December 2004
ER -