抄録
We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an InxGa1−xSe mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the InxGa1−xSe crystal because the In content, estimated according to the Vegard’s law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10−5 J−1. This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.
本文言語 | English |
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ページ(範囲) | 472-477 |
ページ数 | 6 |
ジャーナル | Optics Express |
巻 | 28 |
号 | 1 |
DOI | |
出版ステータス | Published - 2020 |
外部発表 | はい |
ASJC Scopus subject areas
- 原子分子物理学および光学