Terahertz wave generation via difference frequency generation using 2D InxGa1−xSe crystal grown from indium flux

Yohei Sato, Chao Tang, Katsuya Watanabe, Junya Ohsaki, Takuya Yamamoto, Nobuki Tezuka, Tadao Tanabe, Yutaka Oyama

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an InxGa1−xSe mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the InxGa1−xSe crystal because the In content, estimated according to the Vegard’s law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10−5 J−1. This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.

本文言語English
ページ(範囲)472-477
ページ数6
ジャーナルOptics Express
28
1
DOI
出版ステータスPublished - 2020
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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