The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
|ジャーナル||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版物ステータス||Published - 2004 12 1|
|イベント||2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan|
継続期間: 2004 5 31 → 2004 6 4
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering