TY - JOUR
T1 - The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition
AU - Saito, A.
AU - Miyamoto, T.
AU - Kawaguchi, M.
AU - Koyama, F.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
AB - The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
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M3 - Conference article
AN - SCOPUS:23744510227
SP - 56
EP - 59
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SN - 1092-8669
T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
Y2 - 31 May 2004 through 4 June 2004
ER -