The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

A. Saito, T. Miyamoto, M. Kawaguchi, F. Koyama

研究成果: Conference article査読

抄録

The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.

本文言語English
ページ(範囲)56-59
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータスPublished - 2004 12月 1
外部発表はい
イベント2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
継続期間: 2004 5月 312004 6月 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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