抜粋
The effect of current annealing for GaInNAs laser characteristics was investigated and compared with that of thermal annealing. It was found that the threshold current density was largely reduced by the current annealing and became comparable level as thermal annealing. The wavelength shift after current annealing was small contrary to the thermal annealing showing large blue shift. From the experimental result, we indicated that the annealing effects of the threshold current reduction and wavelength shift depends on different mechanisms.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 56-59 |
| ページ数 | 4 |
| ジャーナル | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| 出版物ステータス | Published - 2004 12 1 |
| イベント | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan 継続期間: 2004 5 31 → 2004 6 4 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
フィンガープリント The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Saito, A., Miyamoto, T., Kawaguchi, M., & Koyama, F. (2004). The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 56-59.