The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

T. Nabatame, K. Segawa, M. Kadoshima, H. Takaba, K. Iwamoto, S. Kimura, Y. Nunoshige, H. Satake, Tomoji Ohishi, Akira Toriumi

研究成果: Article

12 引用 (Scopus)

抄録

Effective work function (φm,eff) values of Ru gate electrode on SiO2 and HfO2 MOS capacitors were carefully examined and discussed from the viewpoint of an effect of oxygen incorporation in Ru gate electrode on φm,eff. Annealing at 400 °C in the reduction (3%H2) and the oxidation (1%O2) ambient resulted in similar changes in the φm,eff of Ru/HfO2/SiO2 and Ru/SiO2 MOS capacitors. Furthermore, the Ru gate MOS capacitor after annealing in the oxidation condition have shown almost the same φm,eff value to that of RuO2 gate MOS capacitors. The oxygen concentration in the Ru/HfO2 interface after annealing in oxidizing atmosphere is approximately one order of magnitude higher than that after annealing in reducing atmosphere as confirmed by secondary ion mass spectroscopy analysis. Furthermore, the higher oxygen concentration at the Ru/dielectric interface leads to the higher φm,eff value, regardless of SiO2 or HfO2 dielectrics. This indicates that φm,eff of Ru gate MOS capacitor is dominantly determined by the oxygen concentration at the Ru/dielectric layer interface rather than the dipoles originated from the oxygen vacancy in HfO2.

元の言語English
ページ(範囲)975-979
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
9
発行部数6
DOI
出版物ステータスPublished - 2006 12

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MOS capacitors
capacitors
Oxygen
Electrodes
electrodes
Annealing
oxygen
annealing
atmospheres
Oxidation
oxidation
Oxygen vacancies
mass spectroscopy
Spectroscopy
Ions
dipoles
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure. / Nabatame, T.; Segawa, K.; Kadoshima, M.; Takaba, H.; Iwamoto, K.; Kimura, S.; Nunoshige, Y.; Satake, H.; Ohishi, Tomoji; Toriumi, Akira.

:: Materials Science in Semiconductor Processing, 巻 9, 番号 6, 12.2006, p. 975-979.

研究成果: Article

Nabatame, T, Segawa, K, Kadoshima, M, Takaba, H, Iwamoto, K, Kimura, S, Nunoshige, Y, Satake, H, Ohishi, T & Toriumi, A 2006, 'The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure', Materials Science in Semiconductor Processing, 巻. 9, 番号 6, pp. 975-979. https://doi.org/10.1016/j.mssp.2006.10.013
Nabatame, T. ; Segawa, K. ; Kadoshima, M. ; Takaba, H. ; Iwamoto, K. ; Kimura, S. ; Nunoshige, Y. ; Satake, H. ; Ohishi, Tomoji ; Toriumi, Akira. / The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure. :: Materials Science in Semiconductor Processing. 2006 ; 巻 9, 番号 6. pp. 975-979.
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abstract = "Effective work function (φm,eff) values of Ru gate electrode on SiO2 and HfO2 MOS capacitors were carefully examined and discussed from the viewpoint of an effect of oxygen incorporation in Ru gate electrode on φm,eff. Annealing at 400 °C in the reduction (3{\%}H2) and the oxidation (1{\%}O2) ambient resulted in similar changes in the φm,eff of Ru/HfO2/SiO2 and Ru/SiO2 MOS capacitors. Furthermore, the Ru gate MOS capacitor after annealing in the oxidation condition have shown almost the same φm,eff value to that of RuO2 gate MOS capacitors. The oxygen concentration in the Ru/HfO2 interface after annealing in oxidizing atmosphere is approximately one order of magnitude higher than that after annealing in reducing atmosphere as confirmed by secondary ion mass spectroscopy analysis. Furthermore, the higher oxygen concentration at the Ru/dielectric interface leads to the higher φm,eff value, regardless of SiO2 or HfO2 dielectrics. This indicates that φm,eff of Ru gate MOS capacitor is dominantly determined by the oxygen concentration at the Ru/dielectric layer interface rather than the dipoles originated from the oxygen vacancy in HfO2.",
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AU - Segawa, K.

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AU - Takaba, H.

AU - Iwamoto, K.

AU - Kimura, S.

AU - Nunoshige, Y.

AU - Satake, H.

AU - Ohishi, Tomoji

AU - Toriumi, Akira

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