The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals

Norihisa Machida, Youji Suzuki, Keisei Abe, Naoki Ono, Michio Kida, Yasuo Shimizu

研究成果: Article査読

49 被引用数 (Scopus)

抄録

The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski (CZ) grown silicon crystals were examined through experimental crystal growth. A newly designed gas controller was used for this study. Increase in the oxygen concentration with an increase in argon gas flow rate or with a decrease in furnace pressure was demonstrated for the first time. The results of oxygen concentration changes were analyzed in terms of calculated velocity of argon gas flow along the gas controller over the silicon melt surface. The flow velocity of argon gas was affected both by the argon gas flow rate and the furnace pressure. The flow velocity of argon gas was found to increase with an increase in argon gas flow rate under a fixed furnace pressure or with a decrease in furnace pressure under a fixed argon gas flow rate. The oxygen concentration in the CZ silicon crystals was found to be proportional to the flow velocity of argon gas. Two possible mechanisms which could explain this relationship were discussed.

本文言語English
ページ(範囲)362-368
ページ数7
ジャーナルJournal of Crystal Growth
186
3
DOI
出版ステータスPublished - 1998 3月 7
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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