Surfactant epitaxy has been expected to be a powerful method to improve thin-film growth from 3D island to layered growth, but the atomic level process of surfactant epitaxy has not been revealed yet. The purpose of this paper is to elucidate the phenomenon of surfactant epitaxy by molecular dynamic simulations. It is found that a smaller surface energy is necessary for the surfactant to be stable on the surface and that the difference of the atomic radii between the surfactant and the adatom plays an important role in the process of quick exchange of their positions.
|ジャーナル||Modelling and Simulation in Materials Science and Engineering|
|出版ステータス||Published - 1996 1月|
ASJC Scopus subject areas
- コンピュータ サイエンスの応用