Theory of exciton dephasing in semiconductor quantum dots

研究成果: Article

186 引用 (Scopus)

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We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.

元の言語English
ページ(範囲)2638-2652
ページ数15
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
60
発行部数4
出版物ステータスPublished - 1999 7 15
外部発表Yes

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Excitons
Semiconductor quantum dots
quantum dots
excitons
temperature dependence
Quantum confinement
LDS 751
color centers
Nanocrystals
Temperature
nanocrystals
Acoustics
interactions
acoustics
decay

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

@article{9ea2e1bd9d2c4a09b29dc83dc80bd56f,
title = "Theory of exciton dephasing in semiconductor quantum dots",
abstract = "We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.",
author = "Toshihide Takagahara",
year = "1999",
month = "7",
day = "15",
language = "English",
volume = "60",
pages = "2638--2652",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Theory of exciton dephasing in semiconductor quantum dots

AU - Takagahara, Toshihide

PY - 1999/7/15

Y1 - 1999/7/15

N2 - We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.

AB - We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.

UR - http://www.scopus.com/inward/record.url?scp=4243832866&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243832866&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4243832866

VL - 60

SP - 2638

EP - 2652

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 4

ER -