Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

K. S. Seol, T. Karasawa, Y. Ohki, H. Nishikawa, M. Takiyama

研究成果: Article › 査読

本文言語	English
ページ（範囲）	193-195
ジャーナル	Microelectrons Engineering
巻	36
出版ステータス	Published - 1997 1月 1

引用スタイル

@article{365dbf6524dc4cc4a97ad8b64d823b20,

title = "Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films",

author = "Seol, {K. S.} and T. Karasawa and Y. Ohki and H. Nishikawa and M. Takiyama",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "36",

pages = "193--195",

journal = "Microelectrons Engineering",

}