Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata H.Tabata; K.Segawa K.Segawa; M.Kadoshima M.Kadoshima; Y.Nunoshige Y.Nunoshige; A.Ogawa A.Ogawa; T.Nabatame T.Nabatame; H.Satake H.Satake; T.Ohishi T.Ohishi; A.Toroumi A.Toroumi; Tomoji Oishi

Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata H.Tabata, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, Y.Nunoshige Y.Nunoshige, A.Ogawa A.Ogawa, T.Nabatame T.Nabatame, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toroumi A.Toroumi, Tomoji Oishi

地域環境システム専攻

研究成果: Article › 査読

本文言語	English
ジャーナル	6th International Coference on Atomic Layer Deposition (Seoul, Korea)
出版ステータス	Published - 2006 7 25

引用スタイル

Thermal stability of ALD-grown Ru/HfON/Si capacitors. / H.Tabata, H.Tabata; K.Segawa, K.Segawa; M.Kadoshima, M.Kadoshima; Y.Nunoshige, Y.Nunoshige; A.Ogawa, A.Ogawa; T.Nabatame, T.Nabatame; H.Satake, H.Satake; T.Ohishi, T.Ohishi; A.Toroumi, A.Toroumi; Oishi, Tomoji.

In: 6th International Coference on Atomic Layer Deposition (Seoul, Korea), 25.07.2006.

研究成果: Article › 査読

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AU - K.Segawa, K.Segawa

AU - M.Kadoshima, M.Kadoshima

AU - Y.Nunoshige, Y.Nunoshige

AU - A.Ogawa, A.Ogawa

AU - T.Nabatame, T.Nabatame

AU - H.Satake, H.Satake

AU - T.Ohishi, T.Ohishi

AU - A.Toroumi, A.Toroumi

AU - Oishi, Tomoji

PY - 2006/7/25

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JO - 6th International Coference on Atomic Layer Deposition (Seoul, Korea)

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