Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata H.Tabata; K.Segawa K.Segawa; M.Kadoshima M.Kadoshima; Y.Nunoshige Y.Nunoshige; A.Ogawa A.Ogawa; T.Nabatame T.Nabatame; H.Satake H.Satake; T.Ohishi T.Ohishi; A.Toroumi A.Toroumi; Tomoji Oishi

Thermal stability of ALD-grown Ru/HfON/Si capacitors

H.Tabata H.Tabata, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, Y.Nunoshige Y.Nunoshige, A.Ogawa A.Ogawa, T.Nabatame T.Nabatame, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toroumi A.Toroumi, Tomoji Oishi

地域環境システム専攻

研究成果: Article › 査読

本文言語	English
ジャーナル	6th International Coference on Atomic Layer Deposition (Seoul, Korea)
出版ステータス	Published - 2006 7月 25

引用スタイル

@article{6016dd61d33c4e0ba299de915acf9572,

title = "Thermal stability of ALD-grown Ru/HfON/Si capacitors",

author = "H.Tabata H.Tabata and K.Segawa K.Segawa and M.Kadoshima M.Kadoshima and Y.Nunoshige Y.Nunoshige and A.Ogawa A.Ogawa and T.Nabatame T.Nabatame and H.Satake H.Satake and T.Ohishi T.Ohishi and A.Toroumi A.Toroumi and Tomoji Oishi",

year = "2006",

month = jul,

day = "25",

language = "English",

journal = "6th International Coference on Atomic Layer Deposition (Seoul, Korea)",

}

TY - JOUR

T1 - Thermal stability of ALD-grown Ru/HfON/Si capacitors

AU - H.Tabata, H.Tabata

AU - K.Segawa, K.Segawa

AU - M.Kadoshima, M.Kadoshima

AU - Y.Nunoshige, Y.Nunoshige

AU - A.Ogawa, A.Ogawa

AU - T.Nabatame, T.Nabatame

AU - H.Satake, H.Satake

AU - T.Ohishi, T.Ohishi

AU - A.Toroumi, A.Toroumi

AU - Oishi, Tomoji

PY - 2006/7/25

Y1 - 2006/7/25

M3 - Article

JO - 6th International Coference on Atomic Layer Deposition (Seoul, Korea)

JF - 6th International Coference on Atomic Layer Deposition (Seoul, Korea)

ER -