抄録
The growth of the InGaN multiple-quantum-well light-emitting diodes (LEDs) on an AlN/sapphire template was discussed. It was found that the thermal stability of the LED was demonstrated by measurements of current-voltage, light output power-current and electroluminescence (EL) spectra at different temperatures. It was observed that the EL spectrum peak at 20 mA shifted to lower energy by 17.2 meV for the LED on the template upon increasing temperature. Analysis shows that the LED on template exhibited a higher output power and a better thermal stability with respect to the conventional LED on sapphire using a low-temperature GaN buffer layer.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 3170-3174 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 95 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 2004 3月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）