Thermoelectric properties of Al-doped ZnO thin films

S. Saini; P. Mele; H. Honda; K. Matsumoto; K. Miyazaki; A. Ichinose

doi:10.1007/s11664-014-2992-x

Thermoelectric properties of Al-doped ZnO thin films

S. Saini, P. Mele, H. Honda, K. Matsumoto, K. Miyazaki, A. Ichinose

研究成果: Article

15 引用（Scopus）

抜粋

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO₃ substrates by a pulsed laser deposition technique at various deposition temperatures (T _dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10^-3 Wm^-1 K^-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10^-3 Wm^-1 K ^-2 at 600 K, surpassing the best AZO film previously reported in the literature.

元の言語	English
ページ（範囲）	2145-2150
ページ数	6
ジャーナル	Journal of Electronic Materials
巻	43
発行部数	6
DOI	https://doi.org/10.1007/s11664-014-2992-x
出版物ステータス	Published - 2014

フィンガープリント

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

これを引用

Saini, S., Mele, P., Honda, H., Matsumoto, K., Miyazaki, K., & Ichinose, A. (2014). Thermoelectric properties of Al-doped ZnO thin films. Journal of Electronic Materials, 43(6), 2145-2150. https://doi.org/10.1007/s11664-014-2992-x

@article{fd7e265af1fd486b839c5a970da3c2ab,

title = "Thermoelectric properties of Al-doped ZnO thin films",

abstract = "We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.",

keywords = "PLD, Seebeck, Thermoelectric, ZnO thin films, power factor",

author = "S. Saini and P. Mele and H. Honda and K. Matsumoto and K. Miyazaki and A. Ichinose",

year = "2014",

doi = "10.1007/s11664-014-2992-x",

language = "English",

volume = "43",

pages = "2145--2150",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "6",

}

TY - JOUR

T1 - Thermoelectric properties of Al-doped ZnO thin films

AU - Saini, S.

AU - Mele, P.

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Ichinose, A.

PY - 2014

Y1 - 2014

N2 - We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.

AB - We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.

KW - PLD

KW - Seebeck

KW - Thermoelectric

KW - ZnO thin films

KW - power factor

UR - http://www.scopus.com/inward/record.url?scp=84901947109&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901947109&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-2992-x

DO - 10.1007/s11664-014-2992-x

M3 - Article

AN - SCOPUS:84901947109

VL - 43

SP - 2145

EP - 2150

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -

文献にアクセス

10.1007/s11664-014-2992-x