抜粋
We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 2145-2150 |
| ページ数 | 6 |
| ジャーナル | Journal of Electronic Materials |
| 巻 | 43 |
| 発行部数 | 6 |
| DOI | |
| 出版物ステータス | Published - 2014 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
フィンガープリント Thermoelectric properties of Al-doped ZnO thin films' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Saini, S., Mele, P., Honda, H., Matsumoto, K., Miyazaki, K., & Ichinose, A. (2014). Thermoelectric properties of Al-doped ZnO thin films. Journal of Electronic Materials, 43(6), 2145-2150. https://doi.org/10.1007/s11664-014-2992-x