抄録
We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 2145-2150 |
| ページ数 | 6 |
| ジャーナル | Journal of Electronic Materials |
| 巻 | 43 |
| 発行部数 | 6 |
| DOI | |
| 出版物ステータス | Published - 2014 1 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
これを引用
Thermoelectric properties of Al-doped ZnO thin films. / Saini, S.; Mele, Paolo; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.
：: Journal of Electronic Materials, 巻 43, 番号 6, 01.01.2014, p. 2145-2150.研究成果: Article
}
TY - JOUR
T1 - Thermoelectric properties of Al-doped ZnO thin films
AU - Saini, S.
AU - Mele, Paolo
AU - Honda, H.
AU - Matsumoto, K.
AU - Miyazaki, K.
AU - Ichinose, A.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.
AB - We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.
KW - PLD
KW - power factor
KW - Seebeck
KW - Thermoelectric
KW - ZnO thin films
UR - http://www.scopus.com/inward/record.url?scp=84901947109&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84901947109&partnerID=8YFLogxK
U2 - 10.1007/s11664-014-2992-x
DO - 10.1007/s11664-014-2992-x
M3 - Article
AN - SCOPUS:84901947109
VL - 43
SP - 2145
EP - 2150
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 6
ER -