Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Hajime Kiyono, Toshiki Sakai, Mari Takahashi, Shiro Shimada

研究成果: Article査読

19 被引用数 (Scopus)

抄録

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O 3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 8001000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).

本文言語English
ページ(範囲)2823-2827
ページ数5
ジャーナルJournal of Crystal Growth
312
19
DOI
出版ステータスPublished - 2010 9 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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「Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga<sub>2</sub>O<sub>3</sub> and NH<sub>3</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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