Thickness-dependent optical properties of ZnO thin films

L. Miao, S. Tanemura, M. Tanemura, S. P. Lau, B. K. Tay

研究成果: Article査読

24 被引用数 (Scopus)

抄録

Spectroscopic ellipsometry was employed to study the thickness dependence of the optical properties of ZnO thin films. ZnO thin films with a nominal thickness of 100, 200, and 400 nm were deposited by filtered cathodic vacuum arc (FCVA) method. The optical band gap showed a slight blue shift with respect to the bulk value with increasingly thicker ZnO films deposited on Si, while no shift with thickness could be observed for ZnO films deposited on a SiO 2/Si substrate, indicating a possible effect of the SiO 2 buffer layer on the film optical properties. The Urbach tail parameter E 0 increased as the film thickness is increased, indicating a decrease in the structural disorder with increasing film thickness.

本文言語English
ページ(範囲)343-346
ページ数4
ジャーナルJournal of Materials Science: Materials in Electronics
18
SUPPL. 1
DOI
出版ステータスPublished - 2007 10月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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