Three-dimensional masterslice MMIC on Si substrate

I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, Ch Yamaguchi, M. Hirano, M. Aikawa

    研究成果: Paper査読

    8 被引用数 (Scopus)

    抄録

    This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

    本文言語English
    ページ113-116
    ページ数4
    出版ステータスPublished - 1997 12 1
    イベントProceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC - Denver, CO, USA
    継続期間: 1997 6 81997 6 11

    Other

    OtherProceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC
    CityDenver, CO, USA
    Period97/6/897/6/11

    ASJC Scopus subject areas

    • 工学(全般)

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