This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.
|出版ステータス||Published - 1997 12月 1|
|イベント||Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC - Denver, CO, USA|
継続期間: 1997 6月 8 → 1997 6月 11
|Other||Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC|
|City||Denver, CO, USA|
|Period||97/6/8 → 97/6/11|
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