Three-dimensional micro modification and selective etching of crystalline silicon using 1.56-μm subpicosecond laser pulses

Shigeki Matsuo, Keiji Oda, Yoshiki Naoi

研究成果: Conference contribution

抜粋

Three dimensional micro removal processing was attempted to crystalline silicon substrate using a 1.56-μm subpicosecond laser. Selective removal was observed on both top and rear surfaces when nitric hydrofluoric acid was used as etchant.

元の言語English
ホスト出版物のタイトル2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOI
出版物ステータスPublished - 2013 10 18
イベント10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
継続期間: 2013 6 302013 7 4

出版物シリーズ

名前Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Japan
Kyoto
期間13/6/3013/7/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

フィンガープリント Three-dimensional micro modification and selective etching of crystalline silicon using 1.56-μm subpicosecond laser pulses' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Matsuo, S., Oda, K., & Naoi, Y. (2013). Three-dimensional micro modification and selective etching of crystalline silicon using 1.56-μm subpicosecond laser pulses. : 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600555] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600555