抄録
This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.
本文言語 | English |
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ページ | 642-647 |
ページ数 | 6 |
DOI | |
出版ステータス | Published - 1998 1月 1 |
イベント | 1998 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands 継続期間: 1998 10月 5 → 1998 10月 9 |
Conference
Conference | 1998 28th European Microwave Conference, EuMC 1998 |
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国/地域 | Netherlands |
City | Amsterdam |
Period | 98/10/5 → 98/10/9 |
ASJC Scopus subject areas
- コンピュータ ネットワークおよび通信
- ハードウェアとアーキテクチャ
- 電子工学および電気工学