Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

Koh Inoue; Kenji Kamogawa; Kenjiro Nishikawa; Kenji Ikuta; Kiyomitsu Onodera; Makoto Hirano

doi:10.1109/EUMA.1998.338062

Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

Koh Inoue, Kenji Kamogawa, Kenjiro Nishikawa, Kenji Ikuta, Kiyomitsu Onodera, Makoto Hirano

研究成果: Paper › 査読

6 被引用数 (Scopus)

抄録

This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

本文言語	English
ページ	642-647
ページ数	6
DOI	https://doi.org/10.1109/EUMA.1998.338062
出版ステータス	Published - 1998 1月 1
イベント	1998 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands 継続期間: 1998 10月 5 → 1998 10月 9

Conference

Conference	1998 28th European Microwave Conference, EuMC 1998
国/地域	Netherlands
City	Amsterdam
Period	98/10/5 → 98/10/9

ASJC Scopus subject areas

コンピュータネットワークおよび通信
ハードウェアとアーキテクチャ
電子工学および電気工学

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10.1109/EUMA.1998.338062

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引用スタイル

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AU - Inoue, Koh

AU - Kamogawa, Kenji

AU - Nishikawa, Kenjiro

AU - Ikuta, Kenji

AU - Onodera, Kiyomitsu

AU - Hirano, Makoto

PY - 1998/1/1

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N2 - This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

AB - This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

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T2 - 1998 28th European Microwave Conference, EuMC 1998

Y2 - 5 October 1998 through 9 October 1998

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Three-dimensional MMIC interconnect process using photosensitive BCB and STO capacitors

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Conference

ASJC Scopus subject areas

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