Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa

研究成果査読

13 被引用数 (Scopus)

抄録

The effects of growth temperature on nitrogen incorporation in GaNAs grown by chemical beam epitaxy are studied from 340 to 515°C. Generally speaking, with increasing growth temperature, nitrogen content decreases. However, three distinct growth-temperature-dependent regions for nitrogen incorporation with activation energies of 0.59, 0.05, and 0.95 eV can be identified at low, middle, and high growth temperatures, respectively. At low and high growth temperatures, the growth temperature dependences of nitrogen incorporation are due to triethylgallium (TEG)-pyrolysis- and nitrogen-desorption-controlled processes, respectively, while a TEG-transportation-limited process is observed at middle temperatures. Atomic force microscope (AFM) results also show that there are three different surface morphologies for GaNAs grown at different growth temperatures. Based on X-ray diffraction (XRD) and AFM results, the best growth mechanism is determined, and high quality GaN0.007As 0.993/GaAs triple quantum wells are obtained.

本文言語English
ページ(範囲)2409-2413
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
5 A
DOI
出版ステータスPublished - 2004 5
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル