TY - JOUR
T1 - Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy
AU - Sun, Yijun
AU - Yamamori, Masayuki
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
PY - 2004/5
Y1 - 2004/5
N2 - The effects of growth temperature on nitrogen incorporation in GaNAs grown by chemical beam epitaxy are studied from 340 to 515°C. Generally speaking, with increasing growth temperature, nitrogen content decreases. However, three distinct growth-temperature-dependent regions for nitrogen incorporation with activation energies of 0.59, 0.05, and 0.95 eV can be identified at low, middle, and high growth temperatures, respectively. At low and high growth temperatures, the growth temperature dependences of nitrogen incorporation are due to triethylgallium (TEG)-pyrolysis- and nitrogen-desorption-controlled processes, respectively, while a TEG-transportation-limited process is observed at middle temperatures. Atomic force microscope (AFM) results also show that there are three different surface morphologies for GaNAs grown at different growth temperatures. Based on X-ray diffraction (XRD) and AFM results, the best growth mechanism is determined, and high quality GaN0.007As 0.993/GaAs triple quantum wells are obtained.
AB - The effects of growth temperature on nitrogen incorporation in GaNAs grown by chemical beam epitaxy are studied from 340 to 515°C. Generally speaking, with increasing growth temperature, nitrogen content decreases. However, three distinct growth-temperature-dependent regions for nitrogen incorporation with activation energies of 0.59, 0.05, and 0.95 eV can be identified at low, middle, and high growth temperatures, respectively. At low and high growth temperatures, the growth temperature dependences of nitrogen incorporation are due to triethylgallium (TEG)-pyrolysis- and nitrogen-desorption-controlled processes, respectively, while a TEG-transportation-limited process is observed at middle temperatures. Atomic force microscope (AFM) results also show that there are three different surface morphologies for GaNAs grown at different growth temperatures. Based on X-ray diffraction (XRD) and AFM results, the best growth mechanism is determined, and high quality GaN0.007As 0.993/GaAs triple quantum wells are obtained.
KW - Chemical beam epitaxy
KW - GaNAs
KW - Growth mechanism
KW - Nitrogen incorporation
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U2 - 10.1143/JJAP.43.2409
DO - 10.1143/JJAP.43.2409
M3 - Article
AN - SCOPUS:3142736663
VL - 43
SP - 2409
EP - 2413
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 A
ER -