THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order susceptibility χ(2)

Kyosuke Saito, Tadao Tanabe, Yutaka Oyama

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si3N4 straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ(2) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by.using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications

本文言語English
ページ(範囲)16660-16668
ページ数9
ジャーナルOptics Express
22
14
DOI
出版ステータスPublished - 2014
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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