TY - JOUR
T1 - Ti-Al, graded Al/AlTi, and Ti-Al-N coatings prepared by supersonic Free-Jet PVD
AU - Yumoto, Atsushi
AU - Yamamoto, Takahisa
AU - Hiroki, Fujio
AU - Shiota, Ichiro
AU - Niwa, Naotake
PY - 2004/5/1
Y1 - 2004/5/1
N2 - The authors previously developed Supersonic Free-Jet PVD (SFJ-PVD) as a new coating method in which a coating film is formed by depositing nanoparticles at very high velocity onto a substrate. This SFJ-PVD provides a rapid deposition rate and produces a mixture of different kinds of nanoparticles formed in different evaporation chambers on the substrate. This paper describes the preparation of graded Al/ AlTi, Ti-Al, and Ti-Al-N coating films with SFJ-PVD. Ti-50 at%Al film and graded Al/AlTi film are produced by depositing Al and Ti nanoparticles formed in different evaporation chambers with the controlled evaporation rates of Al and Ti. Ti-Al-N film is produced by depositing nanoparticles formed in the evaporation chamber with a controlled partial pressure of N2 in an atmosphere of He. Mixing Ti and Al nanoparticles by depositing them onto a substrate produces in-situ syntheses of γ-TiAl and α-Ti3Al intermetallic compounds on the substrate regardless of the substrate temperature in these experimental conditions. A smooth, compact, and defect-free structure is formed both at the interface between the substrate and the coating films and inside the coating films. XRD analysis reveals the crystal structure of the Ti-Al-N film to be TiN, Ti 3Al2N2, Ti3AlN, and AlN.
AB - The authors previously developed Supersonic Free-Jet PVD (SFJ-PVD) as a new coating method in which a coating film is formed by depositing nanoparticles at very high velocity onto a substrate. This SFJ-PVD provides a rapid deposition rate and produces a mixture of different kinds of nanoparticles formed in different evaporation chambers on the substrate. This paper describes the preparation of graded Al/ AlTi, Ti-Al, and Ti-Al-N coating films with SFJ-PVD. Ti-50 at%Al film and graded Al/AlTi film are produced by depositing Al and Ti nanoparticles formed in different evaporation chambers with the controlled evaporation rates of Al and Ti. Ti-Al-N film is produced by depositing nanoparticles formed in the evaporation chamber with a controlled partial pressure of N2 in an atmosphere of He. Mixing Ti and Al nanoparticles by depositing them onto a substrate produces in-situ syntheses of γ-TiAl and α-Ti3Al intermetallic compounds on the substrate regardless of the substrate temperature in these experimental conditions. A smooth, compact, and defect-free structure is formed both at the interface between the substrate and the coating films and inside the coating films. XRD analysis reveals the crystal structure of the Ti-Al-N film to be TiN, Ti 3Al2N2, Ti3AlN, and AlN.
KW - Functionally graded material
KW - Nanoparticle
KW - Supersonic gas flow
KW - Titanium-aluminides
KW - Titanium-aluminum-nitrides
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U2 - 10.2320/matertrans.45.1620
DO - 10.2320/matertrans.45.1620
M3 - Article
AN - SCOPUS:3342942589
VL - 45
SP - 1620
EP - 1623
JO - Materials Transactions
JF - Materials Transactions
SN - 1345-9678
IS - 5
ER -