Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs

Y. Mitani, D. Kasai, K. Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	143-146
ジャーナル	Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA
出版ステータス	Published - 2003 5月 1

引用スタイル

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