Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

K. Horio, N. Kurosawa

研究成果: Article査読

抄録

Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.

本文言語English
ページ(範囲)1436-1437
ページ数2
ジャーナルElectronics Letters
34
14
DOI
出版ステータスPublished - 1998 7 9

ASJC Scopus subject areas

  • 電子工学および電気工学

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