抄録
In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal-semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed currentvoltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the field plate mitigates the trapping effects of the surface states. The dependence of lag and current slump on the field-plate length and the SiO2 passivation layer thickness is also studied. We show that it is possible to reduce the current slump and maintain the high-frequency performance of GaAs FETs at optimum values of the field-plate length and the SiO2 layer thickness.
本文言語 | English |
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論文番号 | 5667052 |
ページ(範囲) | 698-703 |
ページ数 | 6 |
ジャーナル | IEEE Transactions on Electron Devices |
巻 | 58 |
号 | 3 |
DOI | |
出版ステータス | Published - 2011 3月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学