Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Kazushige Horio; Toshiya Tanaka; Keiichi Itagaki; Atsushi Nakajima

doi:10.1109/TED.2010.2094621

Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Kazushige Horio, Toshiya Tanaka, Keiichi Itagaki, Atsushi Nakajima

研究成果: Article

24 引用（Scopus）

抜粋

In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal-semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed currentvoltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the field plate mitigates the trapping effects of the surface states. The dependence of lag and current slump on the field-plate length and the SiO₂ passivation layer thickness is also studied. We show that it is possible to reduce the current slump and maintain the high-frequency performance of GaAs FETs at optimum values of the field-plate length and the SiO₂ layer thickness.

元の言語	English
記事番号	5667052
ページ（範囲）	698-703
ページ数	6
ジャーナル	IEEE Transactions on Electron Devices
巻	58
発行部数	3
DOI	https://doi.org/10.1109/TED.2010.2094621
出版物ステータス	Published - 2011 3 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2010.2094621

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Horio, K., Tanaka, T., Itagaki, K., & Nakajima, A. (2011). Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs. IEEE Transactions on Electron Devices, 58(3), 698-703. [5667052]. https://doi.org/10.1109/TED.2010.2094621

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