Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET’s

Kazushige Horio

研究成果: Article査読

33 被引用数 (Scopus)

抄録

Two-dimensional simulations of GaAs MESFET’s are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage ("kink") arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions much. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET’s.

本文言語English
ページ(範囲)2256-2261
ページ数6
ジャーナルIEEE Transactions on Electron Devices
41
12
DOI
出版ステータスPublished - 1994 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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