Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate

Kazushige Horio, Kazuhiro Asada, Hisayoshi Yanai

研究成果: Article

31 引用 (Scopus)

抄録

Numerical simulations of GaAs MESFETs with deep chromium acceptors in the semi-insulating substrate were made. The results were compared with those obtained for a case with deep donors such as EL2 centers and shallow acceptors. It was found that an acceptor density in the substrate is a predominant factor in determining current-voltage characteristics of GaAs MESFETs, whether the acceptor is deep or shallow. Potential profiles were, however, found to depend strongly on the nature of deep levels in the substrate, suggesting that different drain breakdown characteristics or different backgating effects may be observed between the two cases. To minimize short-channel effects in GaAs MESFETs, the substrate conduction must be reduced. For this purpose, the deep-acceptor density in the semi-insulating substrate should be made high.

元の言語English
ページ(範囲)335-343
ページ数9
ジャーナルSolid State Electronics
34
発行部数4
DOI
出版物ステータスPublished - 1991

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field effect transistors
Substrates
simulation
Chromium
Current voltage characteristics
chromium
breakdown
gallium arsenide
conduction
Computer simulation
electric potential
profiles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate. / Horio, Kazushige; Asada, Kazuhiro; Yanai, Hisayoshi.

:: Solid State Electronics, 巻 34, 番号 4, 1991, p. 335-343.

研究成果: Article

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