Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate

Kazushige Horio, Kazuhiro Asada, Hisayoshi Yanai

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Numerical simulations of GaAs MESFETs with deep chromium acceptors in the semi-insulating substrate were made. The results were compared with those obtained for a case with deep donors such as EL2 centers and shallow acceptors. It was found that an acceptor density in the substrate is a predominant factor in determining current-voltage characteristics of GaAs MESFETs, whether the acceptor is deep or shallow. Potential profiles were, however, found to depend strongly on the nature of deep levels in the substrate, suggesting that different drain breakdown characteristics or different backgating effects may be observed between the two cases. To minimize short-channel effects in GaAs MESFETs, the substrate conduction must be reduced. For this purpose, the deep-acceptor density in the semi-insulating substrate should be made high.

本文言語English
ページ(範囲)335-343
ページ数9
ジャーナルSolid State Electronics
34
4
DOI
出版ステータスPublished - 1991 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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