Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's

Kazushige Horio, Kazuoki Usami

研究成果: Paper査読

抄録

2-D simulation of backgating effect in GaAs MESFET's is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2's nature by capturing holes which are generated by impact ionization and flow into the substrate.

本文言語English
ページ115-118
ページ数4
出版ステータスPublished - 1995 12 1
イベントProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
継続期間: 1995 11 61995 11 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CityHong Kong, Hong Kong
Period95/11/695/11/10

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学

フィンガープリント

「Two-dimensional simulation of kink-related backgating effect in GaAs MESFET's」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル