Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, K. Horio

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

元の言語English
ホスト出版物のタイトル2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
編集者M. Laudon, B. Romanowicz
ページ580-583
ページ数4
出版物ステータスPublished - 2002 12 1
イベント2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
継続期間: 2002 4 212002 4 25

出版物シリーズ

名前2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
Puerto Rico
San Juan
期間02/4/2102/4/25

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Two-dimensional simulation of surface-state effects on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. : M. Laudon, & B. Romanowicz (版), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (pp. 580-583). (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).