Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures

K. Horio, A. Nakatani

研究成果: Review article査読

抄録

Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fTin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fTcharacteristics provided that it is slightly away from the intrinsic collector region.

本文言語English
ページ(範囲)331-340
ページ数10
ジャーナルCOMPEL - The international journal for computation and mathematics in electrical and electronic engineering
12
4
DOI
出版ステータスPublished - 1993 4 1

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 計算理論と計算数学
  • 電子工学および電気工学
  • 応用数学

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