抄録
Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fTin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fTcharacteristics provided that it is slightly away from the intrinsic collector region.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 331-340 |
| ページ数 | 10 |
| ジャーナル | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
| 巻 | 12 |
| 号 | 4 |
| DOI | |
| 出版ステータス | Published - 1993 4 1 |
ASJC Scopus subject areas
- コンピュータ サイエンスの応用
- 計算理論と計算数学
- 電子工学および電気工学
- 応用数学