Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

Chemical Compounds

• Deep Donor 100%
• Drain Current 85%
• Electron Particle 7%
• Hysteresis 13%
• Simulation 34%
• Voltage 9%

Engineering & Materials Science

• Buffer layers 39%
• Drain current 70%
• Electric potential 7%
• Electrons 13%
• Hysteresis 13%
• Step response 16%
• Substrates 38%