Two-Dimensional Simulations of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-insulating Substrate

K. Horio, K. Satoh, H. Kusuki

研究成果: Article › 査読

本文言語	English
ページ（範囲）	100-101
ジャーナル	Proceedings of 1993 VPAD, Nara, Japan
出版ステータス	Published - 1993 5月 1

引用スタイル

@article{5c5240a4985f452890de3002d7fbdb54,

title = "Two-Dimensional Simulations of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-insulating Substrate",

author = "K. Horio and K. Satoh and H. Kusuki",

year = "1993",

month = may,

day = "1",

language = "English",

pages = "100--101",

journal = "Proceedings of 1993 VPAD, Nara, Japan",

}