抄録
We report the readout of three-dimensional (3D) optical memory in silica by detecting the photoluminescence (PL) of the bits (voxels). A broad defect-related PL band at 400-700 nm was excited by two-photon absorption of femtosecond (pulse duration of 120 fs) illumination at 795 nm. We employed a simple reflection-type scanning readout without the use of a confocal detection scheme to read 3D memory by recording the PL of the bits (the same objective lens was used for the excitation and the collection of the PL). Bit plane separation as small as 3 μm was resolved without cross talk, when the theoretical limit of the axial resolution evaluated as a full-width at half maximum measure of a bit size was 1.4 μm at the fabrication conditions employed.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 13-15 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 77 |
| 発行部数 | 1 |
| 出版物ステータス | Published - 2000 7 3 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Two-photon readout of three-dimensional memory in silica. / Watanabe, M.; Juodkazis, S.; Sun, H. B.; Matsuo, Shigeki; Misawa, H.
：: Applied Physics Letters, 巻 77, 番号 1, 03.07.2000, p. 13-15.研究成果: Article
}
TY - JOUR
T1 - Two-photon readout of three-dimensional memory in silica
AU - Watanabe, M.
AU - Juodkazis, S.
AU - Sun, H. B.
AU - Matsuo, Shigeki
AU - Misawa, H.
PY - 2000/7/3
Y1 - 2000/7/3
N2 - We report the readout of three-dimensional (3D) optical memory in silica by detecting the photoluminescence (PL) of the bits (voxels). A broad defect-related PL band at 400-700 nm was excited by two-photon absorption of femtosecond (pulse duration of 120 fs) illumination at 795 nm. We employed a simple reflection-type scanning readout without the use of a confocal detection scheme to read 3D memory by recording the PL of the bits (the same objective lens was used for the excitation and the collection of the PL). Bit plane separation as small as 3 μm was resolved without cross talk, when the theoretical limit of the axial resolution evaluated as a full-width at half maximum measure of a bit size was 1.4 μm at the fabrication conditions employed.
AB - We report the readout of three-dimensional (3D) optical memory in silica by detecting the photoluminescence (PL) of the bits (voxels). A broad defect-related PL band at 400-700 nm was excited by two-photon absorption of femtosecond (pulse duration of 120 fs) illumination at 795 nm. We employed a simple reflection-type scanning readout without the use of a confocal detection scheme to read 3D memory by recording the PL of the bits (the same objective lens was used for the excitation and the collection of the PL). Bit plane separation as small as 3 μm was resolved without cross talk, when the theoretical limit of the axial resolution evaluated as a full-width at half maximum measure of a bit size was 1.4 μm at the fabrication conditions employed.
UR - http://www.scopus.com/inward/record.url?scp=0002533152&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0002533152&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0002533152
VL - 77
SP - 13
EP - 15
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -