Two‐dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)

研究成果: Article

抜粋

Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.

元の言語English
ページ(範囲)230-237
ページ数8
ジャーナルInternational Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering
3
発行部数3
DOI
出版物ステータスPublished - 1993 7

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント Two‐dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用