Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.
|ジャーナル||International Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering|
|出版物ステータス||Published - 1993 7|
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