Two‐dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)

Kazushige Horio

研究成果: Article査読

抄録

Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.

本文言語English
ページ(範囲)230-237
ページ数8
ジャーナルInternational Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering
3
3
DOI
出版ステータスPublished - 1993 7

ASJC Scopus subject areas

  • 工学(全般)

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