Ultra-high-speed GaAs MESFET IC modules using flip chip bonding

Hiroyuki Kikuchi, Hideki Tsunetsugu, Makoto Hirano, Satoshi Yamaguchi, Yuhki Imai

研究成果: Article査読

1 被引用数 (Scopus)

抄録

This paper describes a distributed amplifier IC module and a distributed 1: 2 signal distributor IC modulo for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0.1-/im-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1:2 signal distributor module was 40GHz and the loss was 2 dB. These modules were demonstrated at 40Gbit/s and clear eye openings were confirmed.

本文言語English
ページ(範囲)475-482
ページ数8
ジャーナルIEICE Transactions on Electronics
E82-C
3
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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