抄録
This paper describes a distributed amplifier IC module and a distributed 1: 2 signal distributor IC modulo for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0.1-/im-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1:2 signal distributor module was 40GHz and the loss was 2 dB. These modules were demonstrated at 40Gbit/s and clear eye openings were confirmed.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 475-482 |
| ページ数 | 8 |
| ジャーナル | IEICE Transactions on Electronics |
| 巻 | E82-C |
| 発行部数 | 3 |
| 出版物ステータス | Published - 1999 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Ultra-high-speed GaAs MESFET IC modules using flip chip bonding. / Kikuchi, Hiroyuki; Tsunetsugu, Hideki; Hirano, Makoto; Yamaguchi, Satoshi; Imai, Yuhki.
：: IEICE Transactions on Electronics, 巻 E82-C, 番号 3, 1999, p. 475-482.研究成果: Article
}
TY - JOUR
T1 - Ultra-high-speed GaAs MESFET IC modules using flip chip bonding
AU - Kikuchi, Hiroyuki
AU - Tsunetsugu, Hideki
AU - Hirano, Makoto
AU - Yamaguchi, Satoshi
AU - Imai, Yuhki
PY - 1999
Y1 - 1999
N2 - This paper describes a distributed amplifier IC module and a distributed 1: 2 signal distributor IC modulo for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0.1-/im-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1:2 signal distributor module was 40GHz and the loss was 2 dB. These modules were demonstrated at 40Gbit/s and clear eye openings were confirmed.
AB - This paper describes a distributed amplifier IC module and a distributed 1: 2 signal distributor IC modulo for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0.1-/im-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1:2 signal distributor module was 40GHz and the loss was 2 dB. These modules were demonstrated at 40Gbit/s and clear eye openings were confirmed.
KW - Amplifier
KW - Distributor
KW - Flip chip
KW - Gaas mesfet
KW - Microstrip line
UR - http://www.scopus.com/inward/record.url?scp=0033343718&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033343718&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033343718
VL - E82-C
SP - 475
EP - 482
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 3
ER -