Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage

Masahiro Fujii, Tadashi Maeda, Yasuo Ohno, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida

研究成果: Paper

1 引用 （Scopus）

抜粋

SCFL D-FFs with supply voltage as low as 1.3V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 μm AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.

元の言語English
ページ51-54
ページ数4
出版物ステータスPublished - 1994 12 1
外部発表Yes
イベントProceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA
継続期間: 1994 10 16 → 1994 10 19

Other

OtherProceedingsof the 1994 IEEE GaAs IC Symposium
市Philadelphia, PA, USA
期間94/10/16 → 94/10/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Fujii, M., Maeda, T., Ohno, Y., Tokushima, M., Ishikawa, M., Fukaishi, M., & Hida, H. (1994). Ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage. 51-54. 論文発表場所 Proceedingsof the 1994 IEEE GaAs IC Symposium, Philadelphia, PA, USA, .