Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

Y.Tsuychiya Y.Tsuychiya; K.Ueno K.Ueno; V.M.Donnelly V.M.Donnelly; T.Kikkawa T.Kikkawa; Y.Hayashi Y.Hayashi; A.Kobayashi A.Kobayashi; A.Skiguchi A.Skiguchi; Kazuyoshi Ueno

Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

Y.Tsuychiya Y.Tsuychiya, K.Ueno K.Ueno, V.M.Donnelly V.M.Donnelly, T.Kikkawa T.Kikkawa, Y.Hayashi Y.Hayashi, A.Kobayashi A.Kobayashi, A.Skiguchi A.Skiguchi, Kazuyoshi Ueno

機能制御システム専攻

研究成果: Article › 査読

5 被引用数 (Scopus)

本文言語	English
ページ（範囲）	59-60
ジャーナル	1997 Symposium on VLSI Technology Digest of Technical Papers
出版ステータス	Published - 1997 6月 1

引用スタイル

@article{b6248a0716f341398080992878deff30,

title = "Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning",

author = "Y.Tsuychiya Y.Tsuychiya and K.Ueno K.Ueno and V.M.Donnelly V.M.Donnelly and T.Kikkawa T.Kikkawa and Y.Hayashi Y.Hayashi and A.Kobayashi A.Kobayashi and A.Skiguchi A.Skiguchi and Kazuyoshi Ueno",

year = "1997",

month = jun,

day = "1",

language = "English",

pages = "59--60",

journal = "1997 Symposium on VLSI Technology Digest of Technical Papers",

}

TY - JOUR

T1 - Ultra-low resistance direct contact Cu via technology using in-situ chemical vapor cleaning

AU - Y.Tsuychiya, Y.Tsuychiya

AU - K.Ueno, K.Ueno

AU - V.M.Donnelly, V.M.Donnelly

AU - T.Kikkawa, T.Kikkawa

AU - Y.Hayashi, Y.Hayashi

AU - A.Kobayashi, A.Kobayashi

AU - A.Skiguchi, A.Skiguchi

AU - Ueno, Kazuyoshi

PY - 1997/6/1

Y1 - 1997/6/1

M3 - Article

SP - 59

EP - 60

JO - 1997 Symposium on VLSI Technology Digest of Technical Papers

JF - 1997 Symposium on VLSI Technology Digest of Technical Papers

ER -