V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

A. Fujihara, H. Miyamoto, K. Yamanoguchi, E. Mizuki, N. Samoto, S. Tanaka

研究成果: Paper

3 引用 (Scopus)

抜粋

This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.

元の言語English
ページ622-625
ページ数4
出版物ステータスPublished - 2001 1 1
外部発表Yes
イベント2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
継続期間: 2001 5 142001 5 18

Conference

Conference2001 International Conference on Indium Phosphide and Related Materials
Japan
Nara
期間01/5/1401/5/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント V-band MMIC LNA using superlattice-inserted InP heterojunction FETS' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Fujihara, A., Miyamoto, H., Yamanoguchi, K., Mizuki, E., Samoto, N., & Tanaka, S. (2001). V-band MMIC LNA using superlattice-inserted InP heterojunction FETS. 622-625. 論文発表場所 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan.