抄録
The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 6413-6414 |
| ページ数 | 2 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 42 |
| 発行部数 | 10 |
| 出版物ステータス | Published - 2003 10 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Valence-Band Discontinuity at the AIN/Si Interface. / Ishikawa, Hiroyasu; Zhang, Baijun; Egawa, Takashi; Jimbo, Takashi.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 42, 番号 10, 10.2003, p. 6413-6414.研究成果: Article
}
TY - JOUR
T1 - Valence-Band Discontinuity at the AIN/Si Interface
AU - Ishikawa, Hiroyasu
AU - Zhang, Baijun
AU - Egawa, Takashi
AU - Jimbo, Takashi
PY - 2003/10
Y1 - 2003/10
N2 - The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.
AB - The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.
KW - AIN
KW - Band discontinuity
KW - GaN
KW - MOCVD
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=0348220488&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0348220488&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0348220488
VL - 42
SP - 6413
EP - 6414
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -