Valence-Band Discontinuity at the AIN/Si Interface

Hiroyasu Ishikawa, Baijun Zhang, Takashi Egawa, Takashi Jimbo

研究成果: Article査読

22 被引用数 (Scopus)

抄録

The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.

本文言語English
ページ(範囲)6413-6414
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
10
DOI
出版ステータスPublished - 2003 10月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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