Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Kenji Kamogawa, Kenjiro Nishikawa, Chikara Yamaguchi, Makoto Hirano, Ichihiko Toyoda, Tsuneo Tokumitsu

    研究成果: Conference article査読

    3 被引用数 (Scopus)

    抄録

    The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

    本文言語English
    ページ(範囲)1221-1224
    ページ数4
    ジャーナルIEEE MTT-S International Microwave Symposium Digest
    3
    出版ステータスPublished - 1997 1 1
    イベントProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
    継続期間: 1997 6 81997 6 13

    ASJC Scopus subject areas

    • 放射線
    • 凝縮系物理学
    • 電子工学および電気工学

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