抄録
Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L683-L685 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 43 |
| 号 | 5 B |
| DOI | |
| 出版ステータス | Published - 2004 5月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（その他）
- 物理学および天文学（全般）