Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Hao Jiang, Takashi Egawa, Hiroyasu Ishikawa, Chunlin Shao, Takashi Jimbo

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.

本文言語English
ページ(範囲)L683-L685
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
5 B
DOI
出版ステータスPublished - 2004 5 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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