抄録
Visible-blind Schottky metal-semiconductor-metal photodetectors (MSM-PDs) fabricated on an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure were reported. Dark-current density as low as 1.8 × 10 -8 A/cm22 at 10 V bias was obtained. A peak responsivity of 114 mA/W at 350 nm was measured under top illumination with a constant irradiation power density of 10μW/cm2, which corresponds to an external quantum efficiency of 40%. The MSM-PDs based on this structure are of advantage for monolithic integration with HEMT circuits in one epitaxial step.
本文言語 | English |
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ページ(範囲) | L683-L685 |
ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
巻 | 43 |
号 | 5 B |
DOI | |
出版ステータス | Published - 2004 5月 15 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)