Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai, Hiroaki Misawa

研究成果: Article

3 引用 (Scopus)

抜粋

Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

元の言語English
ページ(範囲)L107-L109
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
39
発行部数2 A
出版物ステータスPublished - 2000 2 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

Juodkazis, S., Eliseev, P. G., Watanabe, M., Sun, H. B., Matsuo, S., Sugahara, T., Sakai, S., & Misawa, H. (2000). Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing. Japanese Journal of Applied Physics, Part 2: Letters, 39(2 A), L107-L109.