Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

Saulius Juodkazis; Petr G. Eliseev; Mitsuru Watanabe; Hong Bo Sun; Shigeki Matsuo; Tomoya Sugahara; Shiro Sakai; Hiroaki Misawa

doi:10.1143/jjap.39.l107

Visible photoluminescence from Si⁺-implanted SiO₂ films after high-temperature rapid thermal annealing

Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai, Hiroaki Misawa

研究成果 › 査読

4 被引用数 (Scopus)

抄録

Two photoluminescence (PL) bands were observed in 4×10¹⁵ cm^-2-fluence-Si⁺-implanted 100-nm-thick SiO₂ films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′_δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

本文言語	English
ページ（範囲）	L107-L109
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	39
号	2 A
DOI	https://doi.org/10.1143/jjap.39.l107
出版ステータス	Published - 2000 2
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（その他）
物理学および天文学（全般）

文献へのアクセス

10.1143/jjap.39.l107

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「Visible photoluminescence from Si<sup>+</sup>-implanted SiO<sub>2</sub> films after high-temperature rapid thermal annealing」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{df21e0243d8c4ce98a34f0f12a4bfa45,

title = "Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing",

abstract = "Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.",

author = "Saulius Juodkazis and Eliseev, {Petr G.} and Mitsuru Watanabe and Sun, {Hong Bo} and Shigeki Matsuo and Tomoya Sugahara and Shiro Sakai and Hiroaki Misawa",

year = "2000",

month = feb,

doi = "10.1143/jjap.39.l107",

language = "English",

volume = "39",

pages = "L107--L109",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2 A",

}

TY - JOUR

T1 - Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

AU - Juodkazis, Saulius

AU - Eliseev, Petr G.

AU - Watanabe, Mitsuru

AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Sugahara, Tomoya

AU - Sakai, Shiro

AU - Misawa, Hiroaki

PY - 2000/2

Y1 - 2000/2

N2 - Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

AB - Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

UR - http://www.scopus.com/inward/record.url?scp=0343628777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343628777&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.l107

DO - 10.1143/jjap.39.l107

M3 - Article

AN - SCOPUS:0343628777

VL - 39

SP - L107-L109

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 A

ER -