Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

Saulius Juodkazis; Petr G. Eliseev; Mitsuru Watanabe; Hong Bo Sun; Shigeki Matsuo; Tomoya Sugahara; Shiro Sakai; Hiroaki Misawa

doi:10.1143/jjap.39.l107

Visible photoluminescence from Si⁺-implanted SiO₂ films after high-temperature rapid thermal annealing

Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai, Hiroaki Misawa

機械工学科

研究成果: Article

3 引用（Scopus）

抜粋

Two photoluminescence (PL) bands were observed in 4×10¹⁵ cm^-2-fluence-Si⁺-implanted 100-nm-thick SiO₂ films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′_δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

元の言語	English
ページ（範囲）	L107-L109
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	39
発行部数	2 A
DOI	https://doi.org/10.1143/jjap.39.l107
出版物ステータス	Published - 2000 2

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

文献にアクセス

10.1143/jjap.39.l107

フィンガープリント Visible photoluminescence from Si<sup>+</sup>-implanted SiO<sub>2</sub> films after high-temperature rapid thermal annealing' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

これを引用

Juodkazis, S., Eliseev, P. G., Watanabe, M., Sun, H. B., Matsuo, S., Sugahara, T., Sakai, S., & Misawa, H. (2000). Visible photoluminescence from Si⁺-implanted SiO₂ films after high-temperature rapid thermal annealing. Japanese Journal of Applied Physics, Part 2: Letters, 39(2 A), L107-L109. https://doi.org/10.1143/jjap.39.l107

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title = "Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing",

abstract = "Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.",

author = "Saulius Juodkazis and Eliseev, {Petr G.} and Mitsuru Watanabe and Sun, {Hong Bo} and Shigeki Matsuo and Tomoya Sugahara and Shiro Sakai and Hiroaki Misawa",

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T1 - Visible photoluminescence from Si+-implanted SiO2 films after high-temperature rapid thermal annealing

AU - Juodkazis, Saulius

AU - Eliseev, Petr G.

AU - Watanabe, Mitsuru

AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Sugahara, Tomoya

AU - Sakai, Shiro

AU - Misawa, Hiroaki

PY - 2000/2

Y1 - 2000/2

N2 - Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

AB - Two photoluminescence (PL) bands were observed in 4×1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950-1150 °C with 2-4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E′δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

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